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2 edition of Silicon ribbon growth by a capillary action shaping technique found in the catalog.

Silicon ribbon growth by a capillary action shaping technique

East Fishkill Laboratories

Silicon ribbon growth by a capillary action shaping technique

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Published by Dept. of Energy, for sale by the National Technical Information Center in [Washington], Springfield, Va .
Written in English

    Subjects:
  • Silicon

  • Edition Notes

    ContributionsSchwuttke, G. H, Ciszek, T. F, Kran, A, United States. Dept. of Energy
    The Physical Object
    Paginationv. :
    ID Numbers
    Open LibraryOL14878831M

    Brazing, as we’ve seen, uses the principle of capillary action to distribute the molten filler metal between the surfaces of the base metals. Therefore, during the brazing process, you should take care to maintain a clearance between the base metals to allow capillary action to work most effectively. With the temperature rising constantly, silicon particles began to melt at °C and infiltrated into the preform via the capillary action. Based on equation, B 4 C was partly converted to B 12 (B, C, Si) 3 and SiC. The surface micrographs of sample RBBC14 are shown in figure 5. Capillary action (sometimes capillarity, capillary motion, capillary effect, or wicking) is the ability of a liquid to flow in narrow spaces without the assistance of, or even in opposition to, external forces like effect can be seen in the drawing up of liquids between the hairs of a paint-brush, in a thin tube, in porous materials such as paper and plaster, in some non-porous. Start studying Welding Metallurgy II. Learn vocabulary, terms, and more with flashcards, games, and other study tools. Search. -is governed by the welding process and the welding technique: Welding technique - weave or stringer the filler metal must wet the base metal surfaces and be drawn into or held in the joint by capillary action.


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Silicon ribbon growth by a capillary action shaping technique by East Fishkill Laboratories Download PDF EPUB FB2

The crystal growth method described is a capillary action shaping technique. Meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable die. As ribbon growth depletes the melt meniscus, capillary action supplies replacement by: 4.

Substantial improvements in ribbon surface quality are achieved with a higher melt meniscus than that attainable with the film-fed (EFG) growth technique. A capillary action shaping method is described in which meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable by: 4.

The crystal growth method under investigation is a capillary action shaping technique. Meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable die. Get this from a library. Silicon ribbon growth by a capillary action shaping technique.

[G H Schwutte; T F Ciszek; A Kran; United States. Energy Research and Development Administration. Technical Information Center.; United States. Energy Research and Development Administration.

Division of Solar Energy.]. The crystal-growth method under investigation is a capillary action shaping technique. Meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable dye.

As ribbon growth depletes the melt meniscus, capillary action supplies replacement material. The configuration of the technique used in our initial studies is shown. The crystal-growth method under investigation is a capillary action shaping technique.

Meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable die. As ribbon growth depletes the melt meniscus, supplies replacement material. In this report, a new capillary die design is by: 4. The crystal growth method described is a capillary action shaping technique.

Meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable die. As ribbon growth depletes the melt meniscus, capillary action supplies replacement material. A capillary die is so designed that the bounding edges of the die top are not parallel or concentric with the growing : A.

Kran, T. Ciszek and G. Schwuttke. A new technique is described for growth of large-area silicon ribbons. This technique is an edge-defined, film-fed growth process by which single crystals can be grown having a shape controlled by the outside dimensions of a shaping die, growth taking place from an extremely thin film of liquid fed by capillary action from a crucible Size: KB.

The Capillary Action Shaping Technique and Its Applications. Authors; Hurd, J. L.: “Melt Growth of Silicon Sheets by Edge-Supported Pulling”. Proceedings of the Symposia on Electronic and Optical Properties of Polycrystalline or Impure Semiconductors and Novel Silicon Growth Methods.

The Capillary Action Shaping Technique and Its Cited by: 8. Gunter SCHWUTTKE | Read publications | Contact Gunter SCHWUTTKE WIDE SILICON RIBBON GROWTH BY CAPILLARY ACTION SHAPING TECHNIQUE. Silicon ribbon growth by a capillary action shaping.

The growth of shaped silicon crystals has been attractive for a number of years and several methods to obtain various shapes, in particular flat ribbons, have been developed.

Recently, however, the problem has been much more sharply focused due to the desire for the preparation of very low cost solar cells for terrestrial power generation, and a number of articles in the present volume address this Cited by: T.F. Ciszek, G.H. Schwuttke, and K.H.

Yang, "Factors Influencing Surface Quality and Impurity Distribution in Silicon Ribbons Grown by the Capillary Action Shaping Technique (CAST)," J. Crystal Growth 50 () Silicon ribbons grown as wide as 50 mm by the Capillary Action Shaping Technique (CAST) are classified according to perfection and electrical performa Cited by: The Capillary Action Shaping Technique and Its Applications.

Pages Ciszek, Ted F. Preview Buy Chap19 € Crystal Growth of Silicon Ribbons. Pages Wald, Fritz V. *immediately available upon purchase as print book shipments may be delayed due to the COVID crisis.

ebook access is temporary and does not include. Silicon ribbons mm in thickness were grown by a capillary action shaping technique using graphite capillary dies.

Ribbons up to m in length and 12 mm in width were obtained. Crystallographic ribbon perfection was studied through X-ray topography. MOS structures were used to measure minority carrier lifetimes.

In this paper, we present a solidification growth model that primarily describes the principal components of horizontal ribbon growth process, but also discusses the interaction between fluid flow and heat transfer, crystallization dynamics, and the effects of oxygen impurity distribution in melts, particularly with respect to the morphology of the : Tao Sun, Jianning Ding, Cunhua Jiang, Jiawei Xu, Ningyi Yuan.

Parameters such as die top geometry, die channel geometry, and die composition are found to have significant effects upon surface quality, crystallogr Cited by: Grew silicon tubes from the melt for a specialty application by a technique we introduced earlier _____ T.F.

Ciszek, "Melt Growth of Crystalline Silicon Tubes by a Capillary Action Shaping Technique," Phys. Stat. Sol. (a) 32, (l) ). Shaping processes in crystal growth are a collection of techniques for growing bulk crystals of a defined shape from a melt, Capillary action feeds liquid material to a slit at the center of the shaper.

Horizontal ribbon growth or HRG is a method developed for silicon by which a thin crystalline sheet is pulled horizontally from the top. Float-Zone Grown Silicon.- “Solar” Silicon.- The Capillary Action Shaping Technique and Its Applications.- Crystal Growth of Silicon Ribbons for Terrestrial Solar Cells by the EFG Method.- Author Index Volumes 1–5.

turing was initiated. Nowadays this technique is used by RWE-Schott-Solar. In this technique, the geometry of the ribbon is controlled by a slotted die (1) through which the silicon is fed via capillary action. A seed crystal is lowered until it contacts the molten liquid in the capillary, which forces.

The history, state of the art and future prospects of the direct generation of electricity from sunlight are reviewed. Although expensive, photovoltaic solar cells have become progressively cheaper over the past five years and are already cost-effective for a wide range of low-power applications.

The potential economic and social benefits of these devices are such that intensive and extensive. Mechanical components such as dies and crucibles, which come in contact with a silicon melt during the formation of single crystalline shaped silicon particles, e.g.

thin sheets or ribbons, are coated with silicon oxynitride deposited by chemical vapor deposition by: Abstract Silicon ribbons grown as wide as 50 mm by the Capillary Action Shaping Technique (CAST) are classified according to perfection and electrical performance.

The classification is obtained through scanning electron microscopy (SEM), transmission electron microscopy (TEM), and minority carrier lifetime and solar cell efficiency measurements. capillary action shape and thickness are defined by a graphite “ die “ very high production rates (several ribbon or polygon) poor crystallographic quality impurities from die, crucible, etc.

(carbon is dominant) reaction between molten silicon and the graphite die silicon carbide →disrupt its growth degrade the properties of solar cells. 20 hours' duration of the multiple ribbon furnace.

However, growth rates fell short of the cm/min goal. The standard growth setup produced ribbon of good mechanical quality only at cm/min. IBM has a ribbon-pulling scheme virtually identical to that of Mobil Tyco, which they call the capillary action shaping technique (CAST).

crystals may be grown having a shape controlled by the outside dimensions of a die, the growth taking place from an extremely thin film of liquid fed by capillary action from a crucible below. The principal problem to be overcome in the application of this process to the growth of thick film silicon ribbon relates to the material, such as the.

INTERNATIONAL UNION OF CRYSTALLOGRAPHY Crystallographers J. Appl. Cryst. 15, This section is intended to be a series of short paragraphs dealing with the activities of crystallog.

ribbon with flat faces, if the growth is propagated in a continuous manner. The SiFi's produced in this manner are single crystal, except for twins in the plane of the narrow ribbon. Hence, reasonably high τ is expected. Tubular SiFi's grown by a capillary-action shaping technique.

Horizontal ribbon growth Horizontal ribbon growth or HRG is a method developed for silicon by which a thin crystalline sheet is pulled horizontally from the top of a crucible.

The melt level must be constantly replenished in order to keep the surface of the melt at the same height as the edge of the crucible from which the sheet is being pulled. @article{osti_, title = {Ground-temperature measurements}, author ().

A variety of scientific techniques was employed during area-wide resource assessment. Silicon ribbon growth by a capillary action shaping technique.

Quraterly technical progress report No. Results of the study of the lateral surface of single-crystal (SC) sapphire fibers grown along crystallographic directions [ ] and [ 11 2 ¯ 0 ] by the LHPG method are presented.

The appearance or absence of faceting of the lateral surface of the fibers depending on the growth direction is analyzed. The crystallographic orientation of the facets is by: 4. 3 2. “Performance Analysis of Fingerprint based Image Enhancement and Minutiae Extraction”, R Jain, BVR Reddy & AC Sharma, IPU_ (Unpublished) 3.

“Growth and investigation of multicrystalline silicon sheets by capillary action shaping technique for its potential application in solar cells”’, Leena Garg,SK Pandey, S. Aggarwal, S. Kumar, A.

Thakur. A portion of the present invention is disclosed in "Silicon Ribbon Growth by a Capillary Action Shaping Technique", by G. Schwuttke, et al., Annual Report, Oct. 1,JPL Contract:Subcontract under NASA Contract NAS, pages 5. In essence, it is a modified CZ crystal growth technique.

The crucible filled with liquid Si contains a (graphite) die or nozzle and the crystal is pulled form a thin slot on top of the nozzle; well above the level of the liquid Si in the crucible. The Si used up in the crystallization is fed through capillary action to the surface of the nozzle.

Progress on the dow corning process for solar-grade silicon.- Low-cost, high-efficiency silicon by heat exchanger method and fixed abrasive slicing technique.- Early assessment of the photovoltaic potentialities of RAD polysilicon sheets.- Wide silicon ribbon growth by capillary action shaping technique.- Invited paper: Low-cost crystalline.

Invented capillary action shaping technique for Si ribbon growth. Invented shaped crystal growth from wettable projections. Invented crack free method for directional solidification of : Principal Scientist/Owner at.

crystallization techniques: directional solidification of the ingots, and sheet growth. A large number of examples and pictures highlight these two types of crystallization.

A survey of material char- acterization is added to this chapter. The study of various types of ribbons, and the capillary-action shaping tech.

New crystalline silicon ribbon materials for photovoltaics. (EFG) technology as an example of a type I process. Liquid silicon is lifted by capillary forces through the die, where the silicon ribbon is pulled (left).

Closed forms such as an octagon (side width 10 or cm) are used for the shape of the foil in order to avoid edge effects Cited by:   The capillary action shaping technique [CAST]recently developed by IBM has a good potential for producing low cost silicon sheets suitable for solar cells.

This technique has produced ribbon Author: Neal Dikeman. A method and apparatus for growing a crystalline or poly-crystalline body from a melt is described, wherein the melt is retained by capillary attachment to edge features of a mesa crucible. The boundary profile of the resulting melt surface results in an effect which induces a ribbon grown from the surface of the melt to grow as a flat by:   Such processes are, for example, the EFG process (edge defined film fed growth) and the similar CAST process (capillary action shaping technique) in which a silicon ribbon is pulled, in a manner that defines its shape, from the upper opening of a silicon-filled capillary body ("Low Cost Silicon for Solar Energy Conversion Applications", G.

W.Ribbon Silicon • Ribbon silicon is a technique used to grow multi-crystalline silicon • Two graphite filaments are placed in a crucible of molten silicon • The molten silicon is grown horizontally through capillaryThe molten silicon is grown horizontally through capillary action along the filaments.